期刊信息/Journal information
：中国电子学会和中国科学院半导体研究所
：王守武
：月刊
：1674-4926
：11-5781/TN
：jos@semi.ac.cn
：010-82304277
：100083
：北京912信箱
半导体学报（英文版）/Journal Journal of Semiconductors北大核心CSCDCSTPCDEI
本学报是由中国电子学会主办，中国科学院半导体研究所承办的学术刊物，报道半导体物理学和半导体科学技术领域内最新的科研成果和技术进展，被EI、CA、SA等收录，在中国科学院、国家科委、中共中央宣传部和国家...展开全部>>
收录年代
Exploring heteroepitaxial growth and electrical properties of α-Ga2O3 films on differently oriented sapphire substrates
Wei Wang;Jichun Ye;Shudong Hu;Zilong Wang;Kaisen Liu;Jinfu Zhang;Simiao Wu;Yuxia Yang;Ning Xia;Wenrui Zhang46-51
Homoepitaxial growth of(100)Si-doped β-Ga2O3 films via MOCVD
Wenbo Tang;Yu Hu;Duanyang Chen;Hongji Qi;Zhongming Zeng;Baoshun Zhang;Xueli Han;Xiaodong Zhang;Botong Li;Yongjian Ma;Li Zhang;Tiwei Chen;Xin Zhou;Chunxu Bian39-45
Rapid epitaxy of 2-inch and high-quality α-Ga2O3 films by mist-CVD method
Xiaojie Wang;Wenxiang Mu;Jiahui Xie;Jinteng Zhang;Yang Li;Zhitai Jia;Xutang Tao52-58
Preface to Special Issue on Towards High Performance Ga2O3 Electronics:Epitaxial Growth and Power Devices(Ⅰ)
Genquan Han;Shibing Long;Yuhao Zhang;Yibo Wang;Zhongming Wei1-3
Heterogeneous integration technology for the thermal management of Ga2O3 power devices
Genquan Han;Tiangui You;Yibo Wang;Zheng-Dong Luo;Xin Ou;Yue Hao4-6
A comprehensive review of recent progress on enhancement-mode β-Ga2O3 FETs:Growth,devices and properties
Botong Li;Chunhong Zeng;Tao Ju;Zhongming Zeng;Baoshun Zhang;Xiaodong Zhang;Li Zhang;Yongjian Ma;Wenbo Tang;Tiwei Chen;Yu Hu;Xin Zhou;Chunxu Bian7-23
Recent advances in NiO/Ga2O3 heterojunctions for power electronics
Xing Lu;Yuxin Deng;Yanli Pei;Zimin Chen;Gang Wang24-38
Investigation of β-Ga2O3 thick films grown on c-plane sapphire via carbothermal reduction
Liyuan Cheng;Hezhi Zhang;Wenhui Zhang;Hongwei Liang59-64
Preparation of Sn-doped Ga2O3 thin films and their solar-blind photoelectric detection performance
Lijun Li;Chengkun Li;Shaoqing Wang;Qin Lu;Yifan Jia;Haifeng Chen65-74
Preparation and photodetection performance of high crystalline quality and large size β-Ga2O3 microwires
Yuefei Wang;Yurui Han;Chong Gao;Bingsheng Li;Jiangang Ma;Haiyang Xu;Aidong Shen;Yichun Liu75-79